Fig. 2: Bipolar switching of antiferromagnetic spins.
From: Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
a, b Rxy as a function of magnetic field at VG = +4.0 V (E = +0.1 V/nm) and −4.0 V (−0.1 V/nm), respectively, for the Pt(2 nm)/Cr2O3(40 nm)/Pt(20 nm) trilayer. Red and blue arrows represent the sweep direction of the field and show the switching direction: up to down (blue) and down to up (down). c E-dependence of the switching field for tCr2O3 = 40 nm (closed) and 90 nm (open). The blue and red symbols represent the switching fields for up-to-down and down-to-up, respectively. The blue and red regions in (c) denote deterministic (or monostable) states, with the magnetization directing downward and upward, respectively. The green region in (c) represents the bistable state corresponding to the inside of the hysteresis loops in (a) and (b), where the magnetization direction can be either upward or downward, depending on the applied magnetic field and voltage history. “Up” and “down” are defined by the state of the AHE hysteresis loop.
