Table 1 Comparison of Schottky diode performances for p-channel group III–VI chalcogenides.

From: Molecular beam epitaxial In2Te3 electronic devices

Diode

Barrier Height (eV)

Ideal factor (n)

Saturation current (A)

Ref.

Ti/In2Te3

0.68

26.7

0.4 × 10−9

This work

Al/In2Te3

0.687

4.085

5.28 × 10−5

16

Al/GaTe

0.61

2.5

N/A

17

Cd/GaTe

0.69

1.25

N/A

18

Mo/GaTe

0.58

1.1

N/A

19

Sn/GaTe

0.55

1.03

N/A

20

Au/GaSe

0.79

1.7

N/A

21

Au/GaSe: Ce

0.83

1.34

8.0 × 10−8

21

Back to article page