Fig. 4
From: Nanopore extended field-effect transistor for selective single-molecule biosensing
Gate voltage dependence on dsDNA translocation through the nexFET. a Representative translocation recordings are shown for 300 pM 3 kbp dsDNA in 100 mM KCl and a 1 mM Tris-EDTA buffer, pH 8 with V DS = 700 mV and V G, from top to bottom, equal to −400 mV, −200 mV, −0 mV, 200 mV, and 400 mV, respectively. All measurements were conducted at least three times. I-t traces are shown for a 60 s duration as well as a 4 s inset. Note that the number of events (N) is for the plotted traces. In all cases the traces were filtered using a Bessel filter with a cut-off frequency of 10 KHz (scale bar: main traces 5s, partial traces 0.5s). Also included are surface plots along with peak current and dwell time histograms. For a given voltage, b the event frequency, c mean dwell time, d mean peak current, and e signal-to-noise ratio were calculated. Error bars represent the standard deviation of three independent experimental repeats with different devices
