Fig. 2
From: Andreev molecules in semiconductor nanowire double quantum dots
Stability diagrams. a Current at V bias= 200 μV as a function of left and right gate voltages (V L and V R). Parities of double dot configurations are indicated in brackets. b Numerically computed current at low interdot tunneling as a function of chemical potentials of left and right dots over charging energy U. “SB” marks the corner with numerically reproduced spin blockade. c Differential conductance dI/dV at V bias = 200 μV over the same gate voltage range as in a. Dashed lines indicate the cuts that correspond to panels in Fig. 3. d–f Differential conductance dI/dV at V bias = −200, 50, −50 μV over the same gate voltage range as in a
