Fig. 3
From: Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
Ultrahigh sensitivity and spectrum. a Specific detectivity \(D^*\) as a function of back-gate voltage at V DS of 10 V and optical modulated frequency of 1 Hz and 10 Hz, the dash line is a guide to the eye. b Time dependence of photo-response with increasing irradiance showing a direct measurement of laser power as low as 0.25 fW. c Spectral detectivity and responsivity under irradiance of 1 nW cm−2 and at V DS of 10 V and V G of 35 V, the insert is the spectrum with log scale for y-axis showing the extended spectrum to near-infrared region (1000 nm) with high sensitivity
