Fig. 2

Transfer characteristics and longitudinal magnetoconductivity of 2D hybrid devices. a Gate dependence of the two terminal conductance at room temperature graphene field-effect transistors (FET) (µ ~ 23200 cm² V⁻¹ s⁻¹); pristine graphene (black) and after deposition of QDTP molecule (red). Solid lines represents the theoretical fit of the experimental data using EMT. A positive shift of charge neutrality point V _D (ΔV _g ~ 17 V) confirms the p-type doping due to molecule. Inset: Typical Hall bar graphene—QDTP hybrid device. b Room-temperature transfer characteristic for MoS₂ FETs; pristine MoS₂ (black) and after deposition of QDTP molecule (red). Solid lines represents the power law fit (σ ~ (V _g–V ₀)^β, β here is 3.80 and V ₀ is the threshold voltage of the experimental data. Increment of conductance after the deposition of QDTP molecule confirms the n-type doping of MoS₂. c Longitudinal magneto-conductivity (σ _xx ) at charge neutrality point for different temperatures (300–390 K) for graphene-QDTP. Zero-field values of σ _xx decreases with increasing temperature. The solid lines show the fits using equation for σ _xx (B). d In the case of MoS₂ hybrid, zero-field values of σ _xx increases with temperature. Positive magnetoconductivity observed above the molecular spin transition temperature (360 K)