Fig. 1
From: Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe2 nanodevices
Surface dominant transport and quantum Hall effect in the BSTS device. a A typical curve of temperature-dependent resistance. The inset shows the backgate measurement configuration and the elemental composition of the sample. b Atomic force microscopic image of the device. The zoom-in of (b) shows the granular morphology of the sample surface. The sizes of the clusters are in the tens of nanometers and their heights are about 5 nm. The scale bar on the left is 10 μm (1 μm in the zoom-in). c Gate-dependent conductivity from 2 to 40 K with a step of 2 K, exhibiting the bipolar characteristic. The minimum conductivity appears at a gate voltage of around 16.6 V. d The sheet resistance of several samples (some of them measured before the Co cluster deposition). Red dots are the data measured at 2 K, all of which fall within a small range, with or without Co clusters. This indicates the dominance of the surface transport. The blue dots, measured at 270 K, fall outside the shadowed regime, however. H is the height of the samples, and H 0 denotes the zeroth power of H. e Quantum Hall effect observed at a temperature of 1.8 K and a field of −12 T
