Fig. 2 | Nature Communications

Fig. 2

From: Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Fig. 2

Transport characteristics of MoS2 TC-FETs. a Color map of output curves (I ds vs V ds) at different gate voltages for a typical tunnel-contacted device (room temperature operation). Red and blue-boxed areas highlight the operation range in gate voltage for pn and np diodes, respectively. b Typical ambipolar field effect curve at V ds = +2 V measured in samples fabricated by the reverted vdW stacking method. Inset: same data in a semilog plot

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