Fig. 1
From: Field enhancement of electronic conductance at ferroelectric domain walls
Atomic force microscopy (AFM) measurements of ultra-thin BFO film. a AFM Topography and b c-AFM of the BFO sample in UHV conditions, with V sam = + 1.2 V. Scale bar in a, 100 nm. BE-PFM experiments were performed on the same film in ambient conditions (different location to (a, b)), with the results shown for vertical BE-PFM amplitude in c and lateral BE-PFM amplitude in d for the same region. The respective phase maps are shown in e,f. Scale bar in c, 500 nm. Orientation of the sample and cantilever for the BE-PFM scan is shown in c
