Fig. 2
From: Temporal correlation detection using computational phase-change memory
Crystallization dynamics. a Schematic of a mushroom-type phase change memory device showing the phase configurations. b Illustration of the crystallization dynamics. When an electrical signal with power P inp is applied to a PCM device, significant Joule heating occurs. The resulting temperature distribution across the device is determined by the thermal environment, in particular the effective thermal resistance, R th. The effective thickness of the amorphous region, u a , evolves in accordance with the temperature at the amorphous–crystalline interface, T int, and with the temperature dependence of crystal growth, v g. Experimental estimates of c R th and d v g
