Fig. 3 | Nature Communications

Fig. 3

From: Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques

Fig. 3

The SOT efficiency (θ TI) as a function of Bi2Se3 thickness (t BiSe) at room temperature. Each θ TI represents the averaged value from three devices. The error bars are the standard deviation. Region I, II, and III denoted by different colors represent the charge-to-spin conversion dominated by different mechanisms. The inset shows the schematic of the band structure for each region

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