Fig. 3

Device characterization and imaging using the curved image sensor array. a The optical camera image of the phototransistor array with a truncated icosahedron design on a planar substrate. Inset shows a schematic illustration of the device structure. b Transfer curves of the phototransistor under different light (515 nm) intensities. c Normalized photocurrent change under different light intensities. d Photoresponsivity of the MoS₂-graphene phototransistor compared to the silicon photodetector with the same thickness. e Normalized photocurrent change under IR illumination (850 nm) of different light intensities. Inset shows the light absorbance of MoS₂ and silicon. f Sigma-shaped image captured by the CurvIS array. g The same image with Fig. 3f but captured under IR illumination. Inset images are acquired by a commercial silicon photodetector array with (left) and without (right) an IR filter under IR illumination