Fig. 5
From: Optical charge state control of spin defects in 4H-SiC
Photo-dynamics of \({\rm{V}}_{{\rm{Si}}}^ -\) at 6 K. Reset-pump-measure scheme similar to Fig. 3, but with 780 nm to excite PL in \({\rm{V}}_{{\rm{Si}}}^ -\) instead of 976 nm for VV0. Each of the curves correspond to different pump powers (logarithmic increment for 365 and 976 nm). 365 nm reduces the PL intensity, likely from charge conversion to \({\rm{V}}_{{\rm{Si}}}^0\). Both 976 and 940 nm reinitialize VV toward its bright \({\rm{V}}_{{\rm{Si}}}^ -\) state, but with different rates and power dependence, indicating charge transfer with VV. Charge conversion was measured to be persistent without light on the experiment timescales
