Fig. 6
From: Optical charge state control of spin defects in 4H-SiC
Summary of charge transfer in semi-insulating 4H-SiC under various illumination conditions. Strong transitions are shown by thicker arrows, and the steady-state population after illumination is approximatively represented by the gray area over each state. a Above-bandgap excitation and electron-hole generation. b Excitation above the VV− photoionization transition (~1.3 eV). c Excitation below the VV− photoionization transition, but above VV0 two-photon absorption
