Fig. 1
Topographical and electronic aspects of Si-DB interactions. a Photography of the inside scanner of the low-temperature (9 K) scanning tunneling microscope. b ball and stick sketch of the Si(100):H surface excited by the tungsten tip of the microscope during the local desorption process of an H atom. c, d Ball and stick sketches of the Si-DB// and Si-DB⊥ made of two Si-DBs oriented parallel (c) or perpendicular (d) to the [110] direction of the silicon lattice. The blue, purple, and red circles indicate the positions where the (dI/dV)/(I/V) measurements are done. e, f (34.6 × 36 Å2) STM topographies (V = +1.7 V, I = 33 pA) of the corresponding Si-DB//-⊥ having two Si-DBs separated by a fully hydrogenated silicon dimer. g, h Normalized (dI/dV)/(I/V) curves measured on the Si-DB// and Si-DB⊥. The (dI/dV)/(I/V) curves on the Si:H, the Si-DB positions, and in between the Si-DB are red, blue, and purple, respectively
