Fig. 2
From: Electrically reversible cracks in an intermetallic film controlled by an electric field
Colossal electrical switching at room temperature. a Electrical waveform for creating cracks in PMN-PT. b Schematic of the resistance measurement geometry. c Repeated and reproducible switching of the channel current I sd as a function of the gate electric field E G, measured by V sd = 0.1 V at 300 K. The data for nine continuous cyclic field loops are plotted (data connecting segments 2 and 3 are not shown because they are below the measurement limit). d Corresponding switching current in the PMN-PT substrate of the last scan. The arrows and numbers in c and d are the guidance of the field-sweep sequence
