Table 1 Sheet resistances of silicon samples via SAMM doping technique by van der Pauw measurement

From: Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

Si(100) intrinsic wafer, resistivity > 10 kΩ cm

Rs (kΩ/sq)

Unmodified sample (surface 1)

317

Control sample (annealed surface 3 with carbon monolayer)

226

Phosphorus-doped sample (annealed surface 4)

1.06

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