Table 2 Comparison of the energy levels derived from DLTS spectra, simulations and energy levels of Ci–Ps from ref. 32

From: Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

  

Isolated peaks (meV)

Bump area (meV)

 

Bias pulse

Peak 0

Peak 1

Peak 2

Peak 3

Peak 4

Peak 5

Peak 6

Control sample

−2 to 0 V

102

254

319

378

390

467

480

SAMM -doped sample

−2 to 0 V

--

252

319

380

390 (405)

469

480

−2 to −1V

--

260

319

380

390

467

480

−0.2 to 0.2 V

--

260

319

380

390

467

--

0 to 0.2V

--

260

319

--

390

467

--

Ci–Ps (ref. 32)

--

260

320

380

390

--

480

  1. “--”means no peak is detected or has been reported in that position. The underscored energy levels are derived from simulations