Table 1 Physical properties of SnSe single crystals grown by three different methods

From: Defects controlled hole doping and multivalley transport in SnSe single crystals

Batches

Flux cooling rate

SnSe2 ratioa

Se:Sn

n (1018 cm−3)

Resistivity (Ω mm)

    

SdHb

HallRT

2 K

275 K

SF1

Fast cooling

0.9%

1

0.825

1.16

0.0746

0.360

SF3

3 days to 673 K

<0.3%

1

0.502

0.592

0.136

0.757

SF6

Fast cooling

0.3%

1

0.704

0.69

0.162

0.812

SF7

Fast cooling

3.73%

1

0.836

1.23

0.0776

0.333

SF11

Fast cooling

2.6%

1

0.480

1.079

0.0604

0.333

SF12

Fast cooling

<0.3%

0.95

0.472

0.794

0.191

0.457

BR1

Fast cooling

2.49%

1

0.423

0.699

0.113

0.525

BR2c

Fast cooling

0.5–1.5%

1

0.395

0.591

0.198

0.436

SF8

7 days to 673 K

<0.1%

1

—

—

—

26.4

SF5d

3 days to 673 K

None

1

—

—

—

8303

SF10d

Fast cooling

<0.1%

1

—

—

36.74

6.93

PVD

—

None

1

—

—

—

137760

  1. a Coverage of SnSe2 after exfoliating surface layers. Statistics by ×500 optical microscope
  2. b n sdh is calculated by \(\frac{{2k_{{\rm{SdH}}}^3}}{{3\pi ^2}}\), assuming spherical FSs. A factor of two is multiplied to reflect the double valley transport
  3. c Crystal dependent. SnSe2 microdomains thinner than 5 MLs are not distinguishable under optical microscopy
  4. d Sn and Se are ground and thoroughly mixed before the growth
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