Fig. 1 | Nature Communications

Fig. 1

From: Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Fig. 1

Film configuration and magnetic properties. a Structure of the p-MTJ stack with MgO/CoFeB/W/CoFeB/MgO free layer and W bridging layer; Co/Pt multilayers are synthetic antiferromagnetic (SAF) layers for bottom pinning. b Top view of the p-MTJ pattern (r = 45 nm) taken by scanning electron microscope. c Out-of-plane (⊥) and in-plane (∥) magnetic fields induced hysteresis loops of the p-MTJ film annealed at 410 °C measured by PPMS-VSM; inset is the minor loop. d Dependence of HK on t

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