Fig. 3 | Nature Communications

Fig. 3

From: Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Fig. 3

Magnetoresistance and STT measurements for p-MTJ (r = 75 nm) after optimization at room temperature. a Magnetoresistance as a function of out-of-plane magnetic field. b STT switching measured with pulse current at various τP. c JC as a function of ln(τP/τ0). Arrows show the perpendicular magnetization transitions from AP to P states or the opposite situation

Back to article page