Fig. 5 | Nature Communications

Fig. 5

From: Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Fig. 5

Cs-corrected TEM and EELS results. a Cs-corrected TEM image that profiles the crystallization. The p-MTJ stack was annealed at 390 °C. The scale bar indicates 2 nm. b EELS intensities of Mg, B, and W. Arrows show the positions of the same layer in the two figures. c EDS mapping of the p-MTJ stack, where W is in red

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