Fig. 2
From: Large-area and bright pulsed electroluminescence in monolayer semiconductors
Operation mechanism. a Time-resolved electroluminescence and the corresponding Vg, showing that EL occurs at the Vg transients (time points 2 and 4). b Band diagrams at different times during the operation cycle, corresponding to a. EFn and EFp indicate the quasi-Fermi levels for electrons and holes, respectively. c Vg pulse applied to the simulated device and the corresponding electron/hole density and radiative recombination rate. Simulations were performed for material parameters corresponding to WSe2 using a 50 nm thick gate oxide and Vg = ± 6 V (simulated band diagrams are also shown in Supplementary Figs. 5 and 6)
