Fig. 2
Controllable magnetic hysteresis loops switching by IL gating for in-plane FeCoB/Ru/FeCoB/SiO2/Si SAF heterostructures. a Schematic of IL gating magnetism modification process. b–f are in-situ VSM test of all samples while under IL gating modification. The black curves, blue curves, and red curves illustrate the ungated films, the films gated at 2 V, 4 V, respectively. The applying magnetic field was along easy axis (in-plane)
