Fig. 4
Discussion and generalization for voltage-controlled RKKY interaction. a Schematic of IL gating magnetism modification process for FM/Ru/FM SAF multilayers. b Hysteresis loops of magnetic moment switching during the transition of double-loop and triple-loop pattern. The IL gating effect for FeCoB (1.5 nm)/Ru (0.92 nm)/FeCoB (1.5 nm) SAF structure is chosen as a representative diagram. c In-plane and d out-of-plane RKKY interaction phase diagram, which summarize the variation of hysteresis loops with Ru thickness and gating voltage
