Fig. 6
Interlayer exchange coupling (IEC) simulation for Lead/FM/Ru/FM/Lead structure. a Schematic of the simulation model, here we chose Cu as a common lead and FM represents CoFe alloy or Pt|Co multilayers. Basically, the Ru on both left and right interfaces can be permeated by FM atoms as interface disordering. Under an applied Vg, the chemical potential (Fermi energy) of the contacted FM layer was shifted up, which generated an equivalent voltage on the spin valve as \(V_{\mathrm{b}} \approx V_{\mathrm{g}}\). The red line stand for the artificial potential drop with Vb. b, c represent the IEC of FM = CoFe (1.5 nm) with 5 atomic layer of Ru (~1.1 nm) inside and FM = [Pt(0.88 nm)|Co(0.70 nm)]2 with 4 atomic layer of Ru (~0.88 nm) inside, respectively. We calculated the IEC as a function of Vb and interface disorder concentrations x, which means that the interface is structured as Ru x (CoFe)1-x or Ru x Co1-x for different cases. d, e stand for the dimensionless k||-resolved IEC for FM = CoFe and FM = [Pt|Co]2 multilayer, respectively. Here we chose five Vb points from b (x = 0.5) and c (x = 0.1) under various gating voltages
