Table 1 Catalytic performances of some typical semiconductors

Catalyst	Formation rate (mmol g_cat⁻¹ h⁻¹)							e⁻/h^+a	Selectivity^b (%)
	EG	HCHO	HCOOH	CO	CO₂	H₂	CH₄		EG	HCHO	HCOOH
UV-Vis light
TiO₂	0	1.6	0.11	0.16	0.042	2.0	0.053	0.91	0	84	5.6
ZnO	0	3.0	0.038	0.23	0.028	3.1	0.14	0.90	0	91	1.2
g-C₃N₄	0	0.79	0.33	0.11	0	1.5	0.039	0.92	0	64	27
ZnS	1.3	2.2	0.067	0.083	0	3.4	0.087	0.92	54	43	1.3
Visible light
ZnS	0	0	0	0	0	0	0	—	—	—	—
Cu₂O	0	0.46	0	0	0	0.42	0	0.91	0	100	0
Bi₂S₃	0	0.13	0.017	0.023	0	0.19	0	0.91	0	77	10
CuS	0	0.11	0.013	0	0	0.13	0	1.0	0	89	11
CdS particle	0.28	0.40	0	0	0	0.65	0	0.95	58	42	0
CdS rod	0.46	0.38	0	0	0	0.75	0	0.90	71	29	0
MoS₂ sheet/CdS^c,d	6.0	2.3	0	0	0	7.5	0	0.91	84	16	0
MoS₂ foam/CdS^c,d	11	2.5	0	0	0	12	0	0.92	90	10	0
MoS₂ sheet	0	0	0	0	0	0	0	—	—	—	—
MoS₂ foam	0	0	0	0	0	0	0	—	—	—	—

Reaction conditions: solution, 76 wt% CH₃OH + 24 wt% H₂O, 5.0 cm³; atmosphere, N₂; light source, 300-W Xe lamp; UV-Vis light, λ = 320–780 nm; visible light, λ = 420–780 nm
^a The ratio of electrons and holes consumed in product formation was calculated by the equation of e^–/h⁺ = [2 × n(H₂) + 2 × n(CH₄)]/[2 × n(EG) + 2 × n(HCHO) + 4 × n(HCOOH) + 4 × n(CO) + 6 × n(CO₂)]
^b Selectivity was calculated on a molar carbon basis
^c CdS without designation denotes the CdS nanorod
^d Sheet: MoS₂ nanosheet with a content of 5.0 wt%; foam: MoS₂ nanofoam with a content of 5.0 wt%

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