Fig. 1
From: Ambipolar ferromagnetism by electrostatic doping of a manganite
Schematic and structural characterization of the electric double-layer transistor. a Schematic of the device, fabricated by ultraviolet lithography. The exposed area of LaMnO3 is 300 µm in length and 50 µm in width. The scale bar is 100 µm. b Atomically flat surface of 3 unit cell (uc) LaMnO3 film grown on a SrTiO3 (001) substrate characterized by atomic force microscopy. The scale bar is 1 µm. c High-angle annular dark field (HAADF) image of the SrTiO3-capped sample. The scale bar is 2 nm. d EELS of the SrTiO3-capped sample. The corresponding EELS region is indicated in the green box in the HAADF image (c)
