Fig. 2
From: Ambipolar ferromagnetism by electrostatic doping of a manganite
Transport properties of 3 uc LaMnO3 film at various gate voltages (VG) and temperatures. a The sheet resistance as a function of VG at 300 K. No loop is seen, indicating that effects of oxygen migration are negligible. b, c Hall resistivity (ρxy) of LaMnO3 under of VG = −3 V (b) and 3 V (c) at different temperatures. temperatures. Due to the presence of high noise levels in ρxy (300 K) for magnetic field above 3 Tesla, the high-field data of ρxy at 300 K are omitted. d Hall carrier density expressed in electron or hole content per Mn site based on the Hall results at 2 K and various VG. The error bars at these VG were calculated based on the fluctuation of ρxy within the ordinary Hall effect (OHE) region at 2 K
