Fig. 3
From: Ambipolar ferromagnetism by electrostatic doping of a manganite

Metal–insulator transition (MIT) in ionic liquid-gated 3 uc LaMnO3. a, b The sheet resistance as a function of gate voltages. Both negative (a) and positive (b) voltage regimes show a MIT, accompanying the reduction of sheet resistance. c, d Temperature dependence of magnetoresistance in the hole-doped and electron-doped 3 uc LaMnO3 film