Fig. 4
From: Ambipolar ferromagnetism by electrostatic doping of a manganite
Electron–hole asymmetry in electrostatically gated LaMnO3. a Contour plot of sheet resistance (RS) as a function of gate voltage (VG) and temperature. b Evolution of the resistivity peak (TP) of RS in the electron-doped and hole-doped regimes. c Asymmetric peak magnitude and temperature of the magnetoresistance (MR), defined as (R(H)−R(0))/R(0)) (%), for an electron-doped or hole-doped LaMnO3 film. d First-principles calculations on the magnetism of LaMnO3 under bipolar gating. The exchange coupling parameter and J (open blue dots) and the distortion parameter bl/bs (filled red dots) are shown as a function of doping
