Fig. 3
From: Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
Temperature-dependent FET transport as a function of Cl2-NDI crystal thickness. Temperature-dependent σs-VG characteristics of a thin (5.6 μm), b intermediate (13.2 μm), and c thick (38.4 μm) crystals. The curves change quantitatively and qualitatively: sheet conductance decreases, the temperature dependence inverts, VT increases, and hysteresis increases as crystals become thicker. d Extracted FET mobility vs. temperature for crystals in a–c. A clear cross-over from band-like to activated transport is observed. Inset: ln(μ) vs. 1000/T for the thick crystal data, where the fitting line represents Arrhenius dependence with an activation energy of 48 meV
