Fig. 3
From: Zero-static power radio-frequency switches based on MoS2 atomristors
Radio-frequency characterization of MoS2 RF switches. a, b Experimental S(cattering)-parameter data in both the ON-state (insertion loss) and OFF-state (isolation) of an RF switch based on 0.5 × 0.5 μm2 monolayer MoS2 atomristor. The extracted RON and COFF values are 4.2 Ω and 6.5 fF, respectively. c, d S-parameter insertion loss and isolation data of an RF switch based on 0.5 × 0.5 μm2 bilayer MoS2 atomristor. RON is 5.3 Ω and COFF is 5.4 fF. The dashed lines are derived from an equivalent circuit model
