Fig. 4
From: Direct visualization of current-induced spin accumulation in topological insulators
Current induced spin accumulations in BiSbTeSe2. a–c Spatial two-dimensional HDP map in BSTS1 under bias currents of 0.3 (a), 0 (b), −0.3 mA (c) with Ipump = 0.4 mW. Black dashed lines represent the boundaries of the device. Black arrows show the direction of applied bias current. d Bias current dependence of VL by fixing the laser spot at one edge of the device in BSTS2. e Measurement of HDP at one edge as a function of Bext in BSTS2. f Bias current dependence of VT by fixing the laser spot at the center of the Hall cross in BSTS2. Solid lines are fits. The error bars in d, e, and f are the standard deviation from five measurements
