Fig. 1
From: Gate-controlled quantum dots and superconductivity in planar germanium
Ge/SiGe heterostructure and magnetotransport measurements. a Schematic representation of the full heterostructure (dimensions not to scale). b Simulated band structure within the SiGe–Ge–SiGe heterostructure, showing strain-induced splitting of the heavy and light hole band edges and strong confinement of heavy holes in the Ge. c, d Magnetotransport measurements in a perpendicular magnetic field B, showing clear Shubnikov–de Haas oscillations and quantised Hall conductance as a function of B (c) and the carrier sheet density p (d) as converted from the top gate potential using low-field Hall effect data
