Fig. 1
From: Nanophotonic Pockels modulators on a silicon nitride platform
Design and static response of a C-band ring modulator. a Top view of a PZT-on-SiN ring modulator. b Cross-section of a PZT-covered SiN waveguide. The image contrast was enhanced for clarity. c Schematic of the PZT-covered SiN waveguide. The fundamental TE optical mode is plotted in red. The quiver plot shows the applied electric field distribution between the electrodes. PZT thickness, waveguide width, and gap between the electrodes are, respectively, 150 nm, 1200 nm, and 4 μm. d Normalized transmission spectrum of a C-band ring modulator. e Transmission spectra for different DC voltages. f Resonance wavelength shift versus voltage applied across the PZT, including a linear fit
