Fig. 3
From: Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films
Current-induced magnetization switching in W/TmIG with different TmIG thicknesses. a Switching phase diagram for TmIG with thicknesses from 3.2 to 15 nm, where the external field is along the current direction. Roffset is device-dependent Hall resistance offset. For instances, b, c show the current-induced switching for TmIG with thickness 9.6 and 15 nm, respectively, in the presence of a magnetic field along and against the current direction. The switching is done by applying a 5 ms pulse with varying current amplitude. d TmIG thickness-dependent current switching efficiency, which is estimated from the depinning (coercive) field over switching current density in the zero-external field limit. The error bar originates from the multiple (>3) device measurements
