Fig. 3
From: Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics
Characteristics of surface-reconstructed InAs CQDs. a Photograph of InAs CQDs after surface reconstruction with EDT, MPA, Br, Cl, and I (from left to right). Out of the two phases present, DMF (bottom) and octane (top), surface-reconstructed InAs CQDs are dispersed in the DMF. b PL spectra of naked InAs CQDs (black line) and Br-treated (blue line), and MPA-treated (red line) InAs CQDs. c ζ-potential measured for naked InAs CQDs (black line) and MPA-treated (red line) InAs CQDs dispersed in DMF. UPS spectra in the (d) secondary cutoff region and (e) semilogarithmic valence band region for InAs CQDs capped with MPA, EDT, Br, I, and Cl. f Energy levels ECB, EVB, and EF (vs. the vacuum level) of InAs CQD films, deduced from UPS measurements
