Fig. 5
From: Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics
p–n Junction photovoltaics using n-type InAs CQD layers. a Schematic architecture and (b) scanning electron microscope (SEM) image of PVs. c J–V characteristics and (d) external quantum efficiency (EQE) spectra for the best PV devices without InAs CQDs (gray), with InAs–Br CQDs (red), and with InAs–MPA CQDs (black). e Statistical histogram of PCEs of six devices for each device structure. f Long-term stability in air for the PVs. Newport certification of the PVs: (g) J–V and (h) EQE
