Table 2 Physical parameters of the CQD layers obtained from various measurements

InAs–Br

Electron

1.55 × 10⁻³ (FET)^b 1.34 × 10⁻³ (3D PL)^c

2.77 × 10¹⁶ (FET)^a 4.65 × 10¹⁶ (C–V)^d

3.32 × 10¹⁷ (3D PL)^c

30 (3D PL)^c

InAs–MPA

Electron

2.25 × 10⁻³ (FET)^b 1.78 × 10⁻³ (3D PL)^c

1.28 × 10¹⁷ (FET)^a 1.27 × 10¹⁷ (C–V)^d

1.24 × 10¹⁷ (3D PL)^c

60 (3D PL)^c

PbS–I

Hole^a

2.74 × 10⁻³ (FET)^a (air)

8.11 × 10¹⁵ (FET)^a

–

–

5.30 × 10¹⁵ (C–V)^d (InAs–Br)

–

–

5.18 × 10¹⁵ (C–V)^d (InAs–MPA)

–

–