Fig. 1
From: A simple and robust approach to reducing contact resistance in organic transistors
Electrical properties of OFETs fabricated on diF-TES ADT. a Chemical structure of diF-TES ADT. b Drain current as a function of gate-source voltage in device with channel length L = 100 µm and channel width W = 200 µm, in the saturation regime. c Drain current as a function of drain-source voltage for the same device
