Fig. 3
From: A simple and robust approach to reducing contact resistance in organic transistors
μGIWAXS and NEXAF Spectroscopy measurements. a μGIWAXS was recorded on the contacts of patterned device substrates. Labeled features in the left panel arise from (001) oriented crystals. The triangular feature highlighted in red, present in all images, is a background artifact. Circled features in the right panel are features from the (111) oriented crystallites present on the oxide of long channels. b The NEXAFS intensity of the fast and slow films at different angles between the surface normal and polarization vector of X-rays
