Fig. 6
From: A simple and robust approach to reducing contact resistance in organic transistors
Electrical properties of C16IDT-BT devices. a Chemical structure of C16IDT-BT copolymer. b Drain current as a function of gate-source voltage for a C16IDT-BT device in the saturation regime (VDS = −40V). c Drain current as a function of drain-source voltage for the same device
