Fig. 6

Performance of flexible (PEA)₂PbI₄ SCM photosensor. a, b Schematic illustrations of the photoelectric process and photoconductivity gain in the present Au/(PEA)₂PbI₄ SCM/Au device under light illumination. c The current–voltage (I–V) curves of the (PEA)₂PbI₄ SCM device measured in dark and under 460 nm wavelength illumination with various light intensities. d Photocurrent and responsivity for the (PEA)₂PbI₄ SCM photosensors within the incident light power density ranging from 8 × 10⁻⁵–310 mW cm⁻² at wavelength 460 nm under a fixed 4 V bias. e Measured dark current noise at various frequencies of the (PEA)₂PbI₄ SCM photosensor with a 4 V bias. The measured instrument noise floor, calculated shot noise, and thermal noise limit are also included for reference. f EQE and D* for the (PEA)₂PbI₄ SCM photosensor within the incident light power density ranging from 8 × 10⁻⁵–310 mW cm⁻² at wavelength 460 nm under a fixed 4 V bias. The points correspond to average values of measurements on 20 (PEA)₂PbI₄ SCM photosensors, and the error bars represent the standard deviation. g Absorbance spectrum of the (PEA)₂PbI₄ SCM and photoresponse spectrum of the photosensor illuminated using monochromatic light with wavelength ranging from 350 to 650 nm at 4 V bias. h Temporal photocurrent response of the (PEA)₂PbI₄ SCM photosensor. i Frequency response of the (PEA)₂PbI₄ SCM photosensor