Fig. 3
Behaviors of parallel and perpendicular critical fields. On a 61% nanomesh, a resistance vs temperature (R–T) curves at parallel magnetic fields from 0 to 9 T and b angular dependence of resistance vs magnetic field (R–H) at 2 K. c The yellow circle symbols are Hc(θ) values from b defined by R = 0.5 × RN. The black solid line is a Tinkham formula fit to the nanomesh data with \(H_{{\mathrm{c}}\parallel }\) = 100 T and \(H_{{\mathrm{c}} \bot }\) = 2.8 T; the fits for or \(H_{{\mathrm{c}}\parallel }\) = 50 and 200 T are plotted as violet dash and green dot lines, respectively. The data for 5 ML and 13 ML films were reproduced from ref. 39. The inset is a plot of Hc(θ) and Hc(θ) × sin(θ) to the nanomesh data. The dashed line in the inset corresponds to \(H_{{\mathrm{c}} \bot }\)= 2.8 T. d Perpendicular and e parallel Hc’s near Tc for 7 ML Pb film and nanomesh samples. Experimental data were fitted to \(H_{\mathrm{c}}\left( T \right) \propto \left( {1 - T/T_{\mathrm{c}}} \right)^\gamma\)
