Fig. 5
From: Discovery of TaFeSb-based half-Heuslers with high thermoelectric performance
Dimensionless thermoelectric figure of merit of TaFeSb-based half-Heuslers. a Temperature-dependent ZT of Ta1-xTixFeSb, b comparison of the ZT between Ta0.74V0.1Ti0.16FeSb and the other state-of-the-art p-type half-Heuslers24,25,26,27, c comparison of the average ZT (in the range between 300 and 973 K) between TaFeSb-based half-Heuslers and the other state-of-the-art p-type half-Heuslers, and d the measured hot-side temperature-dependent heat-to-electricity conversion efficiency of Ta0.74V0.1Ti0.16FeSb as compared with state-of-the-art p-type half-Heuslers ZrCoBi0.65Sb0.15Sn0.240 and Nb0.8Ti0.2FeSb25. The cold-side temperature is fixed at 300 K for the calculation of efficiency (solid line)
