Fig. 3
From: Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
Raman and PL studies of the bilayer MoS2 crystals. a Raman and b PL spectra of the as-grown AA and AB stacking bilayer MoS2, CVD-grown monolayer MoS2 and mechanically exfoliated bilayer MoS2, where the PL signal of all bilayer samples were enlarged by 100 times in order to compare with that of monolayer one. Optical image (c) the Raman peak intensity mappings of E12g (d) and A1g (e) as well as the PL intensity mapping of peak A (f) of the as-grown complete AA stacking bilayer MoS2. g Optical image, the Raman peak intensity mappings of E12g h and A1g i as well as the PL intensity mapping of peak A j of the as-grown AB stacking bilayer MoS2. The scale bar is 50 μm
