Fig. 5
From: Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
Electrical properties of the bilayer MoS2FET devices. The representative transfer characteristics (IDS − Vg) and output characteristics (IDS − VDS) for a, b AA and c, d AB stacking bilayer MoS2 FET devices. Insets in a and c are the optical images of the AA and AB stacking bilayer MoS2 devices, respectively. Scale bars are 10 μm in the insets of a and c
