Fig. 6
From: Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
Characterization of the quaternary alloy Mo1−xWxS2(1−y)Se2y bilayer crystals. a–c The representative optical images as well as d,e AFM surface morphologies of the as-grown quaternary alloy Mo1−xWxS2(1−y)Se2y bilayer crystals. f Raman spectra and g PL spectra of the as-grown quaternary alloy Mo1−xWxS2(1−y)Se2y bilayer and monolayer crystals. h XPS spectra of the as-grown quaternary alloy Mo1−xWxS2(1−y)Se2y bilayer crystals. i Transfer and output characteristics of the back-gated FET devices fabricated on the Mo1−xWxS2(1−y)Se2y bilayer samples. The inset is one typical optical image of the FET device. Scale bars, 100 μm in a, 20 μm in b–e, 10 μm in the inset of i
