Fig. 6
High-resolution 4D STEM of larger width line vacancy channels in MoS2. a LAADF image of complex line defect in MoS2 reconstructed from 4D STEM data. Scale bar indicates 0.5 nm. Cyan spots indicate Mo atom sites and orange indicates 2S positions. b Ptychographic phase of a complex line defect area in MoS2 reconstructed from 4D STEM data. c |E┴| map around complex line defect in MoS2 reconstructed from 4D STEM data. d Magnified view of the red boxed area in c, plotted in color. Cyan dots indicate Mo atom sites and white dots indicate S atoms. Scale bar indicates 0.2 nm and is applicable to panels d−g. e Atomic model matching the structure in d. f Ptychographic phase map of the same area as in d. g DFT-calculated |E┴| map, based on the atomic model in e, plotted in color. Cyan dots indicate Mo atom sites and white dots indicate S atoms. h−k Normalized line profiles taken from h red box in a, i yellow box in a, j red box in b, k yellow box in b. Green bands indicate the Mo level, red bands indicate the 2S level and orange band indicates the 1S level
